| PART |
Description |
Maker |
| W3DG7233V75D2 W3DG7233V7D2 W3DG7233V10D2 W3DG7233V |
256MB - 32Mx72 SDRAM, REGISTER and SPD, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| HYM72V32736BLT8-K HYM72V32736BT8-K HYM72V32736BT8- |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
SDRAM - Unbuffered DIMM 256MB
x64 SDRAM Module
|
Hynix Semiconductor
|
| W3DG7232V75AD1 W3DG7232V7AD1 W3DG7232V10AD1 W3DG72 |
256MB - 32Mx72 SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYMD232G726L8-L HYMD232G726L8-K HYMD232G7268 HYMD2 |
Registered DDR SDRAM DIMM
32Mx72|2.5V|K/H/L|x9|DDR SDRAM - Registered DIMM 256MB 32Mx72 | 2.5V的| /升| X9热卖| DDR SDRAM内存-内存256MB的注
|
Hynix Semiconductor
ON Semiconductor
|
| W3EG7234S262D3 W3EG7234S-D3 W3EG7234S265JD3 W3EG72 |
256MB - 32Mx72 DDR SDRAM REGISTERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| HYS72D32501GR-7-A |
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
|
Infineon
|
| HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank
2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
| KMM374S3323T |
32Mx72 SDRAM DIMM(32M x 72 动RAM模块) 32Mx72 SDRAM的内存（32M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| HYS72V32301GR-7.5 HYS72V64300GR-7.5 HYS72V16300GR- |
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块)
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块)
3.3V 1GB SDRAM Module(3.3V 1GSDRAM 模块)
3.3V 256MB SDRAM Module(3.3V 256MSDRAM 模块) 3.3 256MB的内存模块（3.3 256M位内存模块）
3.3V 128MB SDRAM Module(3.3V 128MSDRAM 模块) 3.3 128MB的内存模块（3.3V28兆位内存模块
|
SIEMENS AG
|
| KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3
256Mb (32M x 8) PC133 3-3-3
256Mb (32M x 8) PC100 2-2-2 56Mb的（32M的8）PC100-2-2
x16 SDRAM x16内存
|
Toshiba, Corp.
SIEMENS AG
|
